▣ Title : MRAM Technology : Current Status and Future Challenges

▣ Speaker

: Jae-kyu Lee (SAMSUNG) 

▣ Date

& Time : Friday, October 25 (2:00

~ 3:30pm) 

▣ Place

: LG Research Building, Room #101 

▣ Host

: Prof. Jeong Soo Lee (Tel.

2380)

▣ Abstract :

As

the conventional memories scale down dramatically, the development of DRAMs has

faced many technical problems and challenges to meet the requirements of the

performance such as static refresh and driving current of cell access

transistor.  Many researchers have made

great efforts on those issues and tried to develop novel concepts in

memory devices to overcome physical limitations. Among several alternative

memory concepts, one of the most promising devices is STT-MRAM (Spin

Transfer Torque- Magnetoresistive Random

Access Memory) to replace conventional memories due to

its speed, cost and data retention. In this talk, I

will introduce STT-MRAM as a prominent emerging memory

and review STT-MRAM in accordance with the replacement of DRAM and new

applications. The basic operation of STT_MRAM will be explained

compared to conventional memories such as DRAM and Flash memory. Along

with the process integration of STT-MRAM, some design issues are also

discussed.