◈ Title : PRAM: Structure, Operations, and Applications
◈ Speaker : Principal engineer. Sanghoan Chang(PRAM Development Team/Samsung Electronics Co.)
◈ Date & Time : Friday, March 4, 2011 (3:50pm ~ 5:20pm)
◈ Place : LG Research Building, Room #101
◈ Host : Prof.  Sungjoo, Yoo (Tel. 2379)
◈ Abstract : As the scaling of memory technology approaches the physical limit of memory operation, various types of memories are proposed to extend the scaling by several generations. Among those memories, PRAM has been widely studied in industries as well as in academies owing to its scalability.
In this seminar, basic concepts of PRAM are introduced including cell structure and operation principles. Then, the characteristics of PRAM are compared with those of other various memories like Flash memory and DRAM. As PRAM has been focused for its scalability, the challenges in scaling and the expected properties of  future PRAM cell are discussed. Finally, the examples of current and  the expected future PRAM applications are presented.