국제전문학술지

• Improvement of switching uniformity in HfOx-based resistive random access memory with a titanium film and effects of titanium on resistive switching behaviors, JAPANESE JOURNAL OF APPLIED PHYSICS, , 53, – (2014)
• Effects of Substrate on Piezoelectricity of Electrospun Poly(vinylidene fluoride)-Nanofiber-Based Energy Generators, ACS APPLIED MATERIALS & INTERFACES, , 6, 3520-3527 (2014)
• New Analytical Drain Current Model for the Sub-Linear Region of Output Characteristics of Graphene Field-Effect Transistors in the Low Carrier Density Limit, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 14, 9082-9087 (2014)
• A Technique for the Non-Destructive EUV Mask Sidewall Angle Measurement Using Scanning Electron Microscope, Jounal of Nanoscience and Nanotecnology, , 13, 8032-8035 (2013)
• Highly Efficient Hybrid Energy Generator: Coupled Organic Photovoltaic Device and Randomly Oriented Electrospun Poly(vinylidene fluoride) Nanofiber, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 13, 2236-2241 (2013)
• Proces Optimization for Synthesis of High-Quality Graphene Films by low-pressure Chemical Vapor Deposition, Japaness Journal of Applied Physics, , 51, 6FD21- (2012)
• Optimized Multigrid Strategy for Accurate Flare Modeling with Three-Dimensional Mask Effect in Extreme-Ultraviolet Lithography, Japaness Journal of Applied Physics, , 51, 6FB06- (2012)
• Highly Efficient Hybrid Energy Generator: Coupled Organic Photovoltaic Device and Randomly Oriented, Journal of Nanoscience and Nanotechnology, , 13, 2236-2241 (2012)
• Enhancement of piezoelectricity via electrostatic effects on a textile platform, Energy&Environmental Science, , 5, 8932-8936 (2012)
• Embedded Touch Sensing Circuit Using Mutual Capacitance for Active-Matrix Organic Light-Emitting Diode Display, JAPANESE JOURNAL OF APPLIED PHYSICS, , 50, – (2011)
• Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications, JAPANESE JOURNAL OF APPLIED PHYSICS, , 50, 6GF01- (2011)
• Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, , 50, 6GF16- (2011)
• Perspectives on Nanotechnology for RF and Terahertz Electronics, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, , 59, 2709-2718 (2011)
• Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, , 58, 2871-2875 (2011)
• Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film, IEEE ELECTRON DEVICE LETTERS, , 31, 368-370 (2010)
• Voltage-Programming-Based Pixel Circuit to Compensate for Threshold Voltage and Mobility Using Natural Capacitance of Organic Light-Emitting Diode, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, – (2010)
• A Study of Flare Variation in Extreme Ultraviolet Lithography for Sub-22 nm Line and Space Pattern, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, – (2010)
• Computer Design of Source/Drain Extension Region Profile and Spacer Length in Tri-Gate Body-Tied Fin Field-Effect Transistors with High-k Gate Dielectrics, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, – (2010)
• Effect of Source/Drain Doping Gradient on Threshold Voltage Variation in Double-Gate Fin Field Effect Transistors as Determined by Discrete Random Doping, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, – (2010)
• Unipolar Memory Operation of Resistance Random-Access Memory Using Compliance Current Controller, JAPANESE JOURNAL OF APPLIED PHYSICS, , 48, 4C161- (2009)
• Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films, JAPANESE JOURNAL OF APPLIED PHYSICS, , 48, 4C169- (2009)
• Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode Displays, JAPANESE JOURNAL OF APPLIED PHYSICS, , 48, – (2009)
• Electrically bistable nonvolatile switching devices fabricated with a high performance polyimide bearing diphenylcarbamyl moieties, JOURNAL OF MATERIALS CHEMISTRY, , 19, 2207-2214 (2009)
• Unipolar Resistance Switching in Polymeric Resistance Random Access Memories, JAPANESE JOURNAL OF APPLIED PHYSICS, , 48, – (2009)
• Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors, JAPANESE JOURNAL OF APPLIED PHYSICS, , 48, – (2009)
• Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film, ELECTRONICS LETTERS, , 44, 596-597 (2008)
• High-performance programmable memory devices based on hyperbranched copper phthalocyanine polymer thin films, ADVANCED MATERIALS, , 20, 1766-1767 (2008)
• Effect of the electrode material on the electrical-switching characteristics of nonvolatile memory devices based on poly (o-anthranilic acid) thin films, IEEE ELECTRON DEVICE LETTERS, , 29, 694-697 (2008)
• Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) thin film, APPLIED PHYSICS LETTERS, , 93, – (2008)
• Novel resistance switching devices based on sub-10 nm polymer thin film, JAPANESE JOURNAL OF APPLIED PHYSICS, , 47, 5665-5667 (2008)
• Novel Rewritable, Non-volatile Memory Devices Based on Thermally and Dimensionally Stable Polyimide Thin Films, ADVANCED FUNCTIONAL MATERIALS, , 18, 3276-3282 (2008)
• Novel Digital Driving Method Using Dual Scan for Active Matrix Organic Light-Emitting Diode Displays, JAPANESE JOURNAL OF APPLIED PHYSICS, , 47, 8275-8278 (2008)
• Novel electrical properties of nanoscale thin films of a semiconducting polymer: Quantitative current-sensing AFM analysis, LANGMUIR, , 23, 9024-9030 (2007)
• Bipolar resistive switching in a single layer memory device based on a conjugated copolymer, APPLIED PHYSICS LETTERS, , 91, – (2007)
• Current-dependent switching characteristics of PI-diphenyl carbamyl films, IEEE ELECTRON DEVICE LETTERS, , 28, 967-969 (2007)
• Novel digital nonvolatile memory devices based on semiconducting polymer thin films, ADVANCED FUNCTIONAL MATERIALS, , 17, 2637-2644 (2007)
• Voltage distribution of power source in large AMOLED displays, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, , 48, – (2006)
• A novel self-aligned poly-Si TFT with field-induced drain formed by the damascene process, IEEE ELECTRON DEVICE LETTERS, , 26, 249-251 (2005)
• Investigation of multilayer structural changes in phase and amplitude-defects correction process, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 23, 2866-2869 (2005)
• Influence of field-induced drain on the characteristics of poly-Si thin-film transistor using a self-aligned double spacer process, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 43, 897-900 (2004)
• Recoverable residual image induced by hysteresis of thin film transistors in active matrix organic light emitting diode displays, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, , 43, – (2004)
• PH3 ion shower implantation and rapid thermal anneal with oxide capping and its application to source and drain formation of a fully depleted silicon-on-insulator metal oxide semiconductor field effect transistor, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 43, 6943-6947 (2004)
• Analysis of multilayer structure for reflection of extreme-ultraviolet wavelength, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 41, 4086-4090 (2002)
• Effects of localized contamination with copper in MOSFETs, IEEE ELECTRON DEVICE LETTERS, , 23, 479-481 (2002)
• Fabrication of laser-annealed poly-TFT by forming a Si1-xGex thermal barrier, IEEE ELECTRON DEVICE LETTERS, , 22, 121-123 (2001)
• Determination of proximity effect parameters and the shape bias parameter in electron beam lithography, MICROELECTRONIC ENGINEERING, , 53, 305-308 (2000)
• Resist profile characteristics caused by photoelectron and Auger electron blur at the resist-tungsten substrate interface in 100 nm proximity x-ray lithography, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 18, 3349-3353 (2000)
• Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 39, 6827-6830 (2000)
• Evaluation of effective image blurring factors in the synchrotron proximity X-ray lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 39, 6942-6946 (2000)
• Evaluation of advanced epoxy novolac resist, EPR, for sub 100nm synchrotron x-ray proximity lithography, MICROELECTRONIC ENGINEERING, , 46, 461-464 (1999)
• Prevention of oxygen incorporation in poly-Si1-xGex deposition with interfacial amorphous silicon layer, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, , 37, – (1998)
• The printing conditions for 0.13 mu m features in x-ray lithography using Pohang Light Source, MICROELECTRONIC ENGINEERING, , 42, 267-270 (1998)
• Characterization of acid diffusion for a negative chemically amplified resist using X-ray proximity lithography, MICROELECTRONIC ENGINEERING, , 42, 301-304 (1998)
• Charge pumping investigations on parasitic regions in polysilicon TFT, ELECTRONICS LETTERS, , 34, 809-811 (1998)
• A new charge pumping model considering bulk trap states in polysilicon thin film transistor, SOLID-STATE ELECTRONICS, , 42, 1897-1903 (1998)
• Characterization of pattern geometrical effect on line end shortening in x-ray lithography, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 16, 3515-3520 (1998)
• Characterization of proximity correction in 100-nm-regime X-ray lithography, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 37, 6824-6829 (1998)
• Low temperature (<=550 degrees C) fabrication of CMOS TFT’s on rapid-thermal CVD polycrystalline silicon-germanium films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 36, 1389-1393 (1997)
• Identification of grain-boundary trap properties using three-level charge-pumping technique in polysilicon thin-film transistors, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 36, 1394-1397 (1997)
• An investigation on grain-boundary trap properties using staircase charge-pumping technique in polysilicon thin-film transistors, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 144, 2501-2504 (1997)
• Fabrication of P-channel MOS TFT’s on rapid thermal CVD polycrystalline silicon-germanium films, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, , 35, 919-922 (1996)
• Low-temperature-processed polycrystalline silicon thin-film transistors using titanium disilicide contacts for source and drain, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, , 35, – (1996)
• DIGITAL RANGE IMAGING VLSI SENSOR, IEICE TRANSACTIONS ON INFORMATION AND SYSTEMS, , E77D, 1302-1305 (1994)
• EFFECTS OF VARIOUS PRE-INTRINSIC AND PHOSPHORUS DIFFUSION GETTERING TREATMENTS UPON QUALITY OF CZOCHRALSKI SILICON-WAFER SURFACE DURING A SIMULATED 4-MEGABIT DYNAMIC RANDOM-ACCESS MEMORY PROCESS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, , 139, 1431-1437 (1992)

국내전문학술지

• 대면적 AMOLED DISPLAY 에서의 전압분포에 관한연구, 대한물리학회지, , 48, S5-S9 (2006)
• 싱크로트론 X선 근접 리소그래피에 의하여 전사 되어진 라인의 폭에 대한 에어리얼 이미지 시뮬레이션, 전자공학회지, , 35, 164-171 (1998)

일반학술지

• EFFECT OF VARIOUS ELECTRODE MATERIALS IN NON-VOLATILE MEMORY DEVICE USING POLY(3,4-ETHYLENEDIOXYTHIOPHENE):POLY(STYRENESULFONATE) (PEDOT:PSS) THIN FILMS, ADVANCES IN SCIENCE AND TECHONOLOGY, , 54, 470-473 (2008)
• SIMULTANEOUS SWITCHING NOISE ANALYSIS OF A 16MB×9 DRAM SIMM MEMORY MODULE, INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS, , 6, 647-668 (1995)
• CHARACTERISTICS OF ALGAAS/GAAS QUANTUM-WELL DELTA-DOPED CHANNEL FET(QUADFET), IEEE TRANSACTIONS ON ELECTRON DEVICES, , 37, 1924-1926 (1990)

• Effect of access length on I-V Characteristic of Graphene memory, PROCEEDINGS OF THE 28TH INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, 811- (2015)
• Al2O3/HfO2/Al2O3/Graphene Charge Trap Flash Device with a Self-aligned Gate, SSDM2015, 0, 0, PS13-3- (2015)
• Effect of Rising Edge in Dynamic Stress with Various Duty Ratio in Amorphous Ingazno Thin Film Transistor, IN MEETING ABSTRACTS (NO. 23, PP. 1465-1465). THE ELECTROCHEMICAL SOCIETY. 227TH ECS MEETING, 0, 0, 1465-1465 (2015)
• Uniform Bipolar Switching, Large On/off Window, and Low Power in HfOx-based ReRAM with a Thin Barrier Layer, 26TH INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, – (2013)
• The Effect of Bias-Temperature Stress on Threshold Voltage Instabilities in a-IGZO under Light Illumination and their Modeling Equation, 33TH INTERNATIONAL DISPLAY RESEARCH CONFERENCE, 0, 0, – (2013)
• New Analytical Drain Current Model for Graphene Field-Effect Transistors in the Low Carrier Density Limit, NANO KOREA 2013 SYMPOSIUM DIGEST, 0, 0, – (2013)
• Metrology Analysis of Sub-100 nm Grating Patterns using High Precision Transmission Small Angle X-ray Scattering Technique, MNC 2012, 0, 0, – (2012)
• A Novel Technique for the Non-Destructive Measurement of EUV Mask Sidewall Angle by using Field-Emission CD-SEM and its Analysis, NANO KOREA 2012 SYMPOSIUM, 0, 0, – (2012)
• An Estimation of the Mask Shadow Effect and its Compensation as Flexible Illumination system in EUVL, 2012 EUVL WS, 0, 0, – (2012)
• An Optimized Multi-grid Strategy for Accurate Flare Modeling with 3D Mask, DIGEST OF INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, – (2011)
• Process Optimization for Synthesis of High-quality Graphene Films by Low Pressure Chemical Vapor Deposition, DIGEST OF INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, – (2011)
• Effective Method for Electrode Pattern Positioning in Touch, INTERNNATIONAL DISPLAY WORKSHOP DIGEST, 0, 0, – (2010)
• Embedded Touch Sensing Circuit using the Body Capacitance for AMOLED Display, IDW DIGEST, 0, 0, – (2010)
• Non-volatile resistive memory device based on Poly(3,4- ethylenedioxythiophene):Poly(styrene sulfonate) thin film for transparent and flexible application, JJAP SPECIAL ISSUE, 0, 0, – (2010)
• Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate MOSFET, JJAP SPECIAL ISSUE, 0, 0, – (2010)
• Feasibility Study of a Mask level Correction Strategy for EUV Flare Compensation, JJAP SPECIAL ISSUE, 0, 0, – (2010)
• Effect of Glycerol on Electrical Properties of PMDs and Morphology of Polymer Films used as Nonvolatile Polymer Memory Device based on Glycerol-modified PEDOT:PSS, ASIANANO 2010 DIGEST, 0, 0, – (2010)
• Embedded Multi-Touch Sensing Circuit using the Mutual Capacitance for Active Matrix Organic Light Emitting Diode (AMOLED) Display, AM-FPD DIGEST, 0, 0, – (2010)
• The Influence of Source/Drain Extension Region Profile and Spacer Length on Device Performance of Tri-Gate Body-tied FinFETs, DIGEST OF INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, – (2009)
• Nonvolatile polymer memory device based on Glycerol-modified Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (G-PEDOT:PSS), DIGEST OF INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, – (2009)
• A Study of Flare Variation in Extreme Ultraviolet Lithography for Sub-22nm Line and Space Pattern, INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, – (2009)
• Analysis of the cathode voltage distribution in AMOLED Displays, THE 29TH INTERNATIONAL DISPLAY RESEARCH CONFERENCE, 0, 0, – (2009)
• Voltage Programming Based Pixel Circuit to Compensate Threshold Voltage and Mobility using a Natural Capacitance of Organic Light Emitting Diode (OLED), THE 16TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLAT PANEL DISPLAYS AND DEVICES, 0, 0, – (2009)
• A New Voltage Programmed AMOLED Pixel Circuit using Reference Current, 발표논문집, 0, 0, 9-9 (2005)
• Electrical Bistable Behavior in the Current-Voltage Characteristics of Switching Devices Based on Polyaniline Derivatives, 발표논문집, 0, 0, – (2005)
• Voltage distribution of power source in large-size AMOLED displays, 발표논문집, 0, 0, 219-219 (2005)
• A New Voltage Driven Pixel Ciruit for AMOLED 에 관한 연구, 발표논문집, 0, 0, – (2005)
• Polymer memory device에 관한 연구, 발표논문집, 0, 0, – (2005)
• A New Voltage Driven Pixel Circuit for Large Sized AMOLED Panel, 발표논문집, 0, 0, 539-540 (2004)
• A New Pixel Circuit for Voltage Driven AMOLED Panel, 발표논문집, 0, 0, 123-126 (2004)
• SPICE Simulation of Pixel Circuits to Compensate Threshold Voltage Variation for AMOLED, 발표논문집, 0, 0, – (2004)
• Monte Carlo Simulation of Substrate Photoelectrons in Hard X-ray Lithography and the Effect of Buffer Layer, MNC 2001, 0, 0, – (2001)
• Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography, MNC 2000, 0, 0, – (2000)
• Evaluation of effective image blurring factors in the synchrotron, MNC 2000, 0, 0, – (2000)
• Determination of the effective image blurring parameter in the SR proximity x-ray lithography simulation, Extended Abstract of XEL ’99, 0, 0, – (1999)
• The influence of the substrate materials on the relevant dose and CD in the 0.1㎛ regime proximity x-ray lithography, Extended Abstract of XEL ’99, 0, 0, – (1999)
• Determination of proximity effect parameters and shape bias parameters in electron beam lithography, Extended Abstract of Micro and Nano Engineering, 0, 0, – (1999)
• Evaluation of advanced epoxy novolac resist, EPR, for sub-100nm synchrotron x-ray proximity lithography, Extended Abstract of Micro and Nano Engineering 98, 0, 0, – (1998)
• Characterization of Proximity Correction in 0.1μm Regime X-Ray Lithography, Extended Abstract of Microprocesses and Nanotechnology 98, 0, 0, – (1998)
• Characterization of Pattern Geometry Effect on Line End Shortening in X-Ray Lithography, Extended Abstract of Electron, Ion and Photon Beam Technology and Nanofabrication, 0, 0, – (1998)
• The Printing Conditions for 0.13㎛ features in X-Ray Lithography using Pohang Light Source, Extended Abstract of Micro and Nano Engineering 97, 0, 0, – (1997)
• Evaluation of Aerial Image in XRL, Extended Abstract of SPIE’s International Symposium on Microlithography, Santa Clara, 0, 0, – (1997)
• Characterization of Acid Diffusion for Negative Chemically Amplified Resist using X-Ray Proximity Lithography, Extended Abstract of Micro and Nano Engineering 97, 0, 0, – (1997)
• Current Status of X-ray Lithography Development at the Postech Advenced Lithography Center, Extended Abstract of Int. Workshop on X-ray and Extreme …, 0, 0, – (1997)
• Qualification of Aerial Image in Sub-0.13㎛ XRL, Extended Abstract of Int. Workshop on X-ray & Extreme …, 0, 0, – (1997)
• Low Temperature(≤500℃) CMOS Thin Film Transistors in RTCVD Poly-Si0.88Ge0.12Films, Extended Abstracts of the 1996 Int. Conf. on Solid State …, 0, 0, 335-337 (1996)
• Three-Level Charge-Pumping Techniques for Grain-Boundary Trap Evaluation in Polysilicon Thin-Film Transistors, Extended Abstracts of the 1996 Int. Conf. on Solid State …, 0, 0, 329-331 (1996)
• Low Temperature Polycrystalline Silicon Thin Film Transistors Having Titanium disilicide Source and Drain Contacts, Proc. of the 26th European Solid State Device Rearch Conf., 0, 0, 229-232 (1996)
• Staircase Charge-Pumping study of Trapping Centers at Grain-Boundary in Polysilicon Thin Film Transistors, Extended Abstract of the 190th Electrochemical Soc. Meeting, 0, 0, 679-679 (1996)
• The Hydrogenation Effect of Heterostructured CMOS Thin-Film Transistors in LOW Temperature(≤500℃) RTCVD Films, Extended Abstract of the 190th Electrochemical Soc. Meeting, 0, 0, 692-692 (1996)
• A New Charge Pumping Model in Polysilicon Thin Film Transistor, Extended Abstracts of the IEEE Region 10 International Conference on Microelectronics and VLSI, Hon, 0, 0, 48-51 (1995)
• PMOS Thin Film Transistors Fabricated in RTCVD Polycrystalline Silicon Germanium Films, The 1995 International Conference on Solid State Device and Materials, Osaka Japan, 0, 0, 539-541 (1995)
• Effects of various pre-intrinsic and phosphorus gettering treatments upon quality of neat surface region in CZ silicon wafer during a simulated 4 MB DRAM process, The Electro-Chemical Society Meeting, 0, 0, – (1990)
• A sub-micron FET V gate process for high performance field effect transistor, IEEE 1990 workshop on micrometer and sub-micrometer lithography, New Orleans, LA, 0, 0, – (1990)
• New voltage programmed AMOLED pixel circuit with 3TFTs and 2Capacitors, AM-FPD06 Digest of Technical Paper, 0, 0, 243-246 (0000)
• High performance Non volatile memory cell based on a conjugated polymer, MNC 2006 (Microprocesses and Nanotechnology Conference), 0, 0, 368-369 (0000)
• A new voltage driven AMOLED pixel circuit for compensating the hysteresis of the Poly-silicon TFTs, The 14th Korean Conference on Semiconductors, 0, 0, – (0000)
• Current-voltage (I-V) characteristics of the polymer device using polyaniline derivatives, The 14th Korean Conference on Semiconductors, 0, 0, – (0000)
• Double Hump Phenomenon of Body-Tied FinFETs with Channel Doping, The 14th Korean Conference on Semiconductors, 0, 0, 1029-1030 (0000)
• AMOLED Pixel Structures Compensating the Hysteresis of Poly-Si TFTs, Society For Information Display 2007, 0, 0, 226-229 (0000)
• The same direction voltage sweep switching characteristics in PI-biphenyl carbamyl films, 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, 0, 0, – (0000)
• Novel Sub-10nm Polymer Thin Film Resistance Switching Device, Solid State Devices and Materials, 0, 0, – (0000)
• Unipolar memory operation of resistance RAM(RRAM) using Compliance Current Controller, 2009 International Conference on Solid State Devices and Materials, 0, 0, 204-205 (0000)
• Unipolar Switching Characteristics of Non-volatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS) Thin Films, 2009 International Conference on Solid State Devices and Materials, 0, 0, 202-203 (0000)
• Influence of geometrical fin parameters on Id-Vgs Characteristics in Triple-Gate FinFETs, 21st International Microprocesses and Nanotechnology Conference, 0, 0, 111-112 (0000)
• Unipolar resistance switching in polymeric resistance random access memories, 21st International Microprocesses and Nanotechnology Conference, 0, 0, 101-102 (0000)

• EUVL Flare Modeling with an Improved Accuracy for Feasibility Study of Sub-22nm HP Node, DIGEST OF INTERNATIONAL MICROPROCESSES AND NANOTECHNOLOGY CONFERENCE, 0, 0, – (2011)
• An Investigation of the Impact of Mask Shadowing Effect on Flare in Extreme Ultraviolet Lithography, ., 0, 0, – (2009)

• 저온공정 TFT CMOS 소자의 제작 및 모델링, [삭제]삼성전자(주)기흥공장 (2001-2002)
• SOI를 이용한 SI NANO-CMOS 연구, [삭제]삼성전자(주)기흥공장 (2002-2003)
• SOI를 이용한 SI NANO-CMOS 연구, [삭제]삼성전자(주)기흥공장 (2003-2004)
• 0.15-0.18 ΜM급 MML소자 RELIABILITY 특성 분석, (주)하이닉스반도체 (2000-2001)
• 0.15-0.18㎛급 MML소자 RELIABILITY 특성 분석, (주)하이닉스반도체 (2001-2002)
• AMOLD를 위한 LTPS 소자의 성능 및 화소 회로 구조의 특성에 관한 연구, [삭제]엘지필립스엘시디(주) (2002-2003)
• 극자외선(EXTREME ULTRA VIOLET) 매스크에서의 결함분석 및 복원 기술연구, (주)하이닉스반도체 (2002-2003)
• 극자외선(EUV)용 차세대 노광공정을 위한 MO/SI다측박막형 마스크 기판제작 및 기판결함, 국방과학연구소 (2000-2001)
• 1/2인치 140만화소 CMOS 이미지센서용 영상신호칩 개발, 한양대학교 (2000-2001)
• 1/2인치 140만화소 CMOS이미지 센서 개발, 한양대학교 (2001-2003)
• 다층박막 결함분석 기술개발, 한양대학교 (2002-2003)
• EUV LITHOGRAPHY 용 MASK 제조기술에 관한 연구, (주)하이닉스반도체 (2004-2005)
• SOI를 이용한 SI NANO CMOS 연구, [삭제]삼성전자(주)기흥공장 (2004-2005)
• POLYMER MEMORY 연구, [삭제]삼성전자(주)기흥공장 (2004-2005)
• 40”급 AMOLED를 위한 LTPS 소자 성능 및 설계 기술에 관한 연구, [삭제]엘지필립스엘시디(주) (2004-2005)
• EUV LITHOGRAPHY 용 MASK 제조기술에 관한 연구, (주)하이닉스반도체 (2005-2006)
• SI NANO CMOS 연구, [삭제]삼성전자(주)기흥공장 (2005-2006)
• 대화면 AMOLED를 위한 LTPS소자의 성능 및 화소 회로 구조에 관한 연구, [삭제]엘지필립스엘시디(주) (2003-2004)
• POLYMER MEMORY 연구, [삭제]삼성전자(주)기흥공장 (2005-2006)
• 다층박막 결함분석 기술개발, [삭제]삼성전자(주)기흥공장 (2003-2004)
• 다층박막 결함분석 기술개발, [삭제]삼성전자(주)기흥공장 (2004-2005)
• 마스크 물질 및 구조 연구, 한양대학교 (2004-2005)
• 인건비풀링과제, 포항공과대학교 (2006-2015)
• 자체연구개발과제, 포항공과대학교 (2006-2016)
• AMOLED 디스플레이의 화질 개선을 위한 새로운 구동 방법에 관한 연구, [삭제]엘지필립스엘시디(주) (2006-2007)
• EUV LITHOGRAPHY 용 MASK 제조기술에 관한 연구, (주)하이닉스반도체 (2006-2007)
• SI NANO CMOS 연구, [삭제]삼성전자(주)기흥공장 (2006-2007)
• POLYMER MEMORY 연구, [삭제]삼성전자(주)기흥공장 (2006-2007)
• AMOLED 디스플레이의 화질 개선을 위한 새로운 구동 방법에 관한 연구, [삭제]엘지필립스엘시디(주) (2006-2007)
• EUV LITHOGRAPHY 용 MASK 제조기술에 관한 연구EUV LITHOGRAPHY 용 MASK 제조기술에 관한 연구, (주)하이닉스반도체 (2007-2008)
• EUV LITHOGRAPHY 용 MASK 제조기술에 관한 연구, (주)하이닉스반도체 (2008-2009)
• AMOLED 패널의 전원 신호 해석 및 OLED 소자 모델링에 관한 연구, 엘지디스플레이(주) (2008-2009)
• RRAM형 NONVOLATILE MEMORY의 집적화연구, 삼성전자(주) (2008-2009)
• EUV FLARE 및 SHADOWING CORRECTION TOOL 개발, (주)하이닉스반도체 (2009-2010)
• 터치 스크린 패널의 센서 구조 설계, 삼성모바일디스플레이(주) (2009-2010)
• RRAM형 NONVOLATILE MEMORY의 집적화연구, 삼성전자(주) (2010-2011)
• EUV FLARE 및 SHADOWING CORRECTION TOOL 개발, (주)하이닉스반도체 (2010-2011)
• OXIDE TFT 소자 해석에 관한 연구, 엘지디스플레이(주) (2011-2012)
• EUV SIDEWALL ANGLE에 따른 SHADOW EFFECT 변화예측 및 측정기술 개발, 에스케이하이닉스 주식회사 (2011-2012)
• CVD GRAPHENE이용한 FET와 NONVOLATILE MEMORY 소자 연구, 삼성전자(주) (2011-2012)
• CVD GRAPHENE 이용한 FET와 NONVOLATILE MEMORY 소자 연구, 삼성전자(주) (2012-2013)
• OXIDE TFT 소자 해석에 관한 연구, 엘지디스플레이(주) (2012-2013)
• OXIDE TFT 소자 해석에 관한 연구, 엘지디스플레이(주) (2013-2014)
• 20~30NM 수준의 GATE LENGTH를 갖는 SI CMOS에서의 MECHANICAL STRESS에의한 특성 변화에 관한 연구, 에스케이하이닉스 주식회사 (2014-2016)
• OXIDE BCE TFT 소자 해석에 관한 연구, 엘지디스플레이(주) (2014-2015)
• 자체연구개발과제[2015년 신설], 포항공과대학교 (2015-2020)
• OXIDE BCE TFT 소자 해석에 관한 연구(2차년도), 엘지디스플레이(주) (2015-2016)

• 김오현,정훈주,정명훈,최재호, 유기발광다이오드 표시장치, 한국, 10-2008-0019794 (2016)
• 김오현,이동진,홍상현,김지연,이문호, 아닐린계 고분자를 활성층에 포함하는 비휘발성 메모리 소자, 한국, 10-2006-0128718 (1992)
• 이문호,김오현,이동진,홍상현,김지연, 아닐린계 고분자를 활성층에 포함하는 비휘발성 메모리 소자, 한국, 10-2006-0128718 (1992)