국제전문학술지

• Buffer effects of two functional groups against pH variation at aminosilanized Electrolyte-Oxide-Semiconductor (EOS) capacitor, Sensors and Actuators B: Chemical, , 242, 324-331 (2017)
• Effects of single grain boundary and random interface traps on electrical variations of sub-30 nm polysilicon nanowire structures, MICROELECTRONIC ENGINEERING, , 149, 113-116 (2016)
• Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity, BIOSENSORS & BIOELECTRONICS, , 77, 695-701 (2016)
• Design guidelines for nanoscale vacuum field emission transistors, Journal of Vacuum Science & Technology B, , 34, – (2016)
• Highly Enhanced Performance of Network-Channel Polysilicon Thin-Film Transistors, IEEE Electron Device Letters, , , – (2016)
• Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate, Journal of Nanoscience and Nanotechnology, , 16, 5159-5163 (2016)
• A Reconfigurable and Portable Highly Sensitive Biosensor Platform for ISFET and Enzyme-based Sensors, IEEE Sensors Journal, , 16, 4443-4451 (2016)
• Silicon nanowire biosensors for detection of cardiac troponin I (cTnI) with high sensitivity, BIOSENSORS & BIOELECTRONICS, , 77, 695-701 (2015)
• Effects of single grain boundary and random interface traps on electrical variations of sub-30nm polysilicon nanowire structures, MICROELECTRONIC ENGINEERING, , 149, 113- (2015)
• Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm Node, IEEE ELECTRON DEVICE LETTERS, , 36, 994-996 (2015)
• Three-dimensional simulation of threshold voltage variations due to an oblique single grain boundary in sub-40nm polysilicon nanowire FETs, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 30, – (2015)
• Investigation of RC Parasitics Considering Middle-of-the-Line in Si-Bulk FinFETs for Sub-14-nm Node Logic Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 62, 3441-3444 (2015)
• Impact of the spacer dielectric constant on parasitic RC and design guidelines to optimize DC/AC performance in 10-nm-node Si-nanowire FETs, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, – (2015)
• Physical DC and thermal noise models of 18nm double-gate junctionless p-type MOSFETs for low noise RF applications, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, – (2015)
• Extraction of source/drain resistivity parameters optimized for double-gate FinFETs, JAPANESE JOURNAL OF APPLIED PHYSICS, , 54, – (2015)
• Ga-doped indium oxide nanowire phase change random access memory cells, Nanotechnology, , 25, 55205-1-55205-7 (2014)
• Silicon Nanowire Biologically Sensitive Field Effect Transistors: Electrical Characteristics and Applications, Journal of Nanoscience and Nanotechnology, , 14, 273-287 (2014)
• Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In2O3) nanowire phase change random access memory, Applied Physics Letters, , 104, 103510-1-103510-4 (2014)
• Synthesis and Characterization of carbon nanowalls on Different Substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition, Carbon, , 72, 372-380 (2014)
• Finite Amplitude Effects on Landau Damping and Diminished Transportation of Trapped Electrons, JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, , 83, 74502-1-74502-10 (2014)
• In Situ Observation of Melting Behavior of ZnTe Nanowires, The Journal of Physical Chemistry, , 118, 15061-15067 (2014)
• Investigation of Low-Frequency Noise in p-type Nanowire FETs: Effect of Switched Biasing Condition and Embedded SiGe Layer, IEEE ELECTRON DEVICE LETTERS, , 35, 702-704 (2014)
• Annealing effect on the thermal conductivity of thermoelectric ZnTe nanowires, Materials Letters, , 135, 87-91 (2014)
• Threshold voltage variations due to oblique single grain boundary in sub-50-nm polysilicon channel, IEEE TRANSACTIONS ON ELECTRON DEVICES, , 61, 2705-2710 (2014)
• Single-crystalline CdTe nanowire field effect transisitor as a nanowire-based photodetector, Physical Chemistry Chemical Physics, , 16, 22687-22693 (2014)
• Thermally Phase-Transformed In2Se3 Nanowires for Highly Sensitive Photodetectors, SMALL, , 10, 3795-3802 (2014)
• Suspended Honeycomb Nanowire ISFETs for Improved Stiction-Free Performance, NANOTECHNOLOGY, , 25, 345501- (2014)
• Role of an encapsulating layer for reducing resistance drift in phase change random access memory, AIP ADVANCES, , 4, 127155- (2014)
• Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation, Solid-State Electronics, , 80, 10-13 (2013)
• Bandgap engineering of CdxZn1-xTe nanowires, Nanoscale, , 5, 932-935 (2013)
• Analytic model of S/D series resistance in trigate finfets with polygonal epitaxy, IEEE TRANSACTONS ON ELECTRON DEVICES, , 60, 1302-1309 (2013)
• Investigation of the electrical stability of Si-nanowire biologically sensitive field-effect transistors with embedded Ag/AgCl pseudo reference electrode, RSC Advances, , 3, 7963-7969 (2013)
• Thermally efficient and highly scalable In2Se3 nanowire phase change memory, Journal of Applied Physics, , 113, 164303-1-164303-6 (2013)
• Simultaneous Formation of Ohmic Contacts on p (+)- and n (+)-4H-SiC Using a Ti/Ni Bilayer, Journal of Electronic Materials, , 42, 2897-2904 (2013)
• Thermal Conductivity of ZnTe Nanowires, Journal of Applied Physics, , 114, 134314-1-134314-7 (2013)
• Investigation of electromigration in In2Se3 nanowire for phase change memory devices, Applied Physics Letters, , 103, 233504-1-233504-4 (2013)
• Simple S/D Series Resistance Extraction Method Optimized for Nanowire FETs, IEEE Electron Device Letters, , 34, 828-830 (2013)
• Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs, Microelectronic engineering, , 112, 80-83 (2013)
• Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress, Japanese Journal of Applied Physics, , 52, 4CC21-1-4CC21-4 (2013)
• Improved Electrical Characteristics of Honeycomb Nanowire ISFETs, IEEE Electron Devices Letters, , 34, 1059-1061 (2013)
• Thermal breakdown of ZnTe nanowires, CHEMPHYSCHEM, , 13, 347-352 (2012)
• Electrical characteristics of 20-nm junctionless Si nanowire transistors, Solid State Electronics, , 73, 7-10 (2012)
• Electron states in a silicon nanowire in the presence of surface potential and field, Nanotechnology, , 23, 415201-1-415201-15 (2012)
• Post-growth modification of electrical properties of ZnTe nanowires, CHEMICAL PHYSICS LETTERS, , 543, 117-120 (2012)
• Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications, IEEE ELECTRON DEVICE LETTERS, , 33, 1234-1236 (2012)
• Investigation of low-frequency noise behavior after hot-carrier stress in an n-channel junctionless nanowire MOSFET, IEEE ELECTRON DEVICE LETTERS, , 33, 1538-1540 (2012)
• Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors, IEEE ELECTRON DEVICE LETTERS, , 33, 1348-1350 (2012)
• ENABLING COMMUNICATION AND COOPERATION IN BIO-NANOSENSOR NETWORKS: TOWARD INNOVATIVE HEALTHCARE SOLUTIONS, IEEE WIRELESS COMMUNICATIONS, , 19, 42-51 (2012)
• Process optimization for synthesis of high-quality graphene films by low-pressure chemical vapor deposition, Japanese Journal of Applied Physics, , 51, 6FD21-1-6FD21-4 (2012)
• C-V Characteristics in Undoped Gate-All-Around Nanowire FET Array, IEEE Electron Device Letters, , 32, 116-118 (2011)
• Synthesis of ZnTe nanostructures by vapor-liquid-solid technique, CHEMICAL PHYSICS LETTERS, , 504, 62-66 (2011)
• Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High-k Dielectrics, IEEE ELECTRON DEVICE LETTERS, , 32, 434-436 (2011)
• Characterization and Modeling of 1/f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of Oxides, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 10, 417-423 (2011)
• Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics, ANALYST, , 136, 5012-5016 (2011)
• Comprehensive Study of Quasi-Ballistic Transport in High-kappa/Metal Gate nMOSFETs, IEEE ELECTRON DEVICES LETTERS, , 32, 1474-1476 (2011)
• Interfacial-layer-driven dielectric degradation and breakdown of HfSiON/SiON gate dielectric nMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 32, 1319-1321 (2011)
• In situ Observation of Morphological Change in CdTe Nano- and Submicron Wires, NANOTECHNOLOGY, , 22, 435204-1-435204-6 (2011)
• New Investigation of Hot-Carrier Degradation on RF Small-Signal Parameter and Performance in High-k/Metal-Gate nMOSFETs, IEEE ELECTRON DEVICES LETTERS, , 32, 1668-1670 (2011)
• A computational and experimental investigation of the mechanical properties of single ZnTe nanowires, NANOSCALE, , 4, 897-903 (2011)
• Thermal breakdown of ZnTe nanowires, CHEMPHYSCHEM, , 13, 347-352 (2011)
• A sub-micron metallic electrothermal gripper, MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, , 16, 367-373 (2010)
• Electrical and gas sensing properties of ZnO nanorod arrays directly grown on a four-probe electrode system, ELECTROCHEMISTRY COMMUNICATIONS, , 12, 475-478 (2010)
• Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function Technique, IEEE TRANSACTIONS ON NANOTECHNOLOGY, , 9, 212-217 (2010)
• Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique, JAPANESE JOURNAL OF APPLIED PHYSICS, , 49, 4DN06-01-4DN06-05 (2010)
• The quiet revolution of inorganic nanowires: fabrication techniques and potential applications, IEEE NANOTECHNOLOGY MAGAZINE, , 4, 5-9 (2010)
• Nanoscale Memory Devices, NANOTECHNOLOGY, , 21, 412001-1-412001-22 (2010)
• The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs, IEEE ELECTRON DEVICE LETTERS, , 31, 1104-1106 (2010)
• Single ZnO Nanowire Based High-Performance Field Effect Transistors (FETs), JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 9, 5839-5844 (2009)
• Forming carbon nanotube composites by directly coating forests with inorganic materials using low pressure chemical vapor deposition, THIN SOLID FILMS, , 517, 525-530 (2008)
• The effect of plasma anodization on AlGaN/GaN HEMT, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, , 51, S258-S261 (2007)
• Gas-phase and sample characterizations of multiwall carbon nanotube growth using an atmospheric pressure plasma, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, , 24, 1812-1817 (2006)
• Carbon nanotubes-based methanol sensor for fuel cell application, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, , 6, 3608-3613 (2006)
• Chemical synthesis of PEDOT nanotubes, MACROMOLECULES, , 39, 470-472 (2006)
• Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layer, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, , 23, 1013-1017 (2005)
• Sub-micron metallic electrothermal actuators, JOURNAL OF MICROMECHANICS AND MICROENGINEERING, , 15, 322-327 (2005)

• Extraction of Source / Drain Series Resistance Components Optimized for Double-gate FinFETs, INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, – (2014)
• Impact of High-k Spacers on Parasitic Effects Considering DC/AC Performance Optimization in Si-Nanowire FETs for sub 10nm Technology Node, INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, – (2014)
• Physical DC and Thermal Noise Models of 18 nm DG Junctionless pMOSFETs, INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, – (2014)
• Size-dependent Characteristics of Highly-scalable In2Se3 Nanowire Phase-change Random Access Memory, THE 13TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 0, 0, – (2013)
• Extraction of Series Resistance on Junctionless and Inversion-mode nanowire FET through the Method based on Y-function, 71ST ANNUAL DEVICE RESEARCH CONFERENCE, 0, 0, – (2013)
• Characterization of Low Frequency Noise in Nanowire FETs Considering Variability and Quantum Effects, 71ST ANNUAL DEVICE RESEARCH CONFERENCE, 0, 0, – (2013)
• Simultaneous formation of ohmic contacts on p- and n-type 4H-SiC using Ti/Ni double layer system, MATERIALS RESEARCH SOCIETY SPRING MEETING, 0, 0, – (2013)
• A 600V trench gate MOSFET with charge sheet super junction(CSSJ), 한국반도체학술대회논문집, 0, 0, – (2012)
• Process optimization for synthesis of high-quality graphene films by low pressue chemical vapor deposition, PROCESS OPTIMIZATION FOR SYNTHESIS OF HIGH-QUALITY GRAPHENE FILMS BY LOW PRESSUE CHEMICAL VAPOR DEPOSITION, 0, 0, – (2011)
• Reliable Extraction of Series Resistance in Silicon Nanowire FETs Using Y-function Technique, 2011 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 0, 0, – (2011)
• Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon, 2011 INTERNATIONAL CONFERENCE ON SOLID STATE AND DEVICE MATERIALS, 0, 0, – (2011)
• Hot carrier Effect on RF Chracteristics of High-k Metal Gate SiGe Channel pMOSFETs, 2011 INTERNATIONAL CONFERENCE ON SOLID STATE S AND MATERIALS, 0, 0, – (2011)
• U-Health Smart Home, NANOTECHNOLOGY MAGAZINE, 0, 0, – (2011)
• Analysis of Parasitic Bottom Capacitance, 2011 11TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 0, 0, – (2011)
• In-Situ TEM Monitoring of Thermal Decomposition in CdTe and ZnTe Nanowires, MICROSCOPY AND MICROANALYSIS 2011, 0, 0, – (2011)
• Comparative study of fabricated junctionless and inversion-mode nanowire FETs, PROCEEDINGS OF DRC, 0, 0, – (2011)
• Low-frequency noise behavior of La-doped Hf/SiON/metal gate nMOSFETs, PROCEEDINGS OF 2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 0, 0, – (2011)
• pH Sensing and Noise Characteristics of Si Nanowire Ion-Sensitive Field Effect Transistors, IEEE-NEMS, 0, 0, – (2011)
• 실리콘 나노선을 이용한 Ion-Sensitive Field Effect Transistor의 제작 및 전기적 특성 분석, 한국반도체학술대회, 0, 0, 651-652 (2011)
• In2Se3 나노선 합성 및 이를 이용한 상변화 메모리소자의 전기적 특성 분석, 한국반도체학술대회, 0, 0, 895-896 (2011)
• Photonic Quantum Ring from Quantum Corral of Whispering Cave Mode, 광자기술학술회의, 0, 0, – (2010)
• Reliability properties in sub-50 nm high performance high-k.metal gate stacks SiGe pMOSFETs, IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 0, 0, – (2010)
• C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array, PROCEEDINGS OF 2010 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 0, 0, – (2010)
• Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects, PROCEEDINGS OF 2010 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 0, 0, – (2010)
• Impact of Dipole-induced Dielectric Relaxation on High-frequency Performance in La-incorporated HfSiON/Metal Gate, PROCEEDINGS OF IEDM 2009, 0, 0, 127-130 (2009)
• Series Resistance Behavior Extracted from Silicon Nanowire Reansistors Using the Y-function Technique, ., 0, 0, – (2009)
• Effects of Extension Profile Engineering to Suppress Boron TED on the Reliability of High-k/Metal Gate SiGe pMOSFETS, IEEE INTERNATIONAL SYMPOSIUM ON ADVANCED GATE STACK TECHNOLOGY, 0, 0, – (2009)
• FinFET Process Refinement for Improved Mobility and Gate Work Function Engineering, IEEE IEDM Technical Digest, 0, 0, 259-262 (2002)

• Void-free bottom-up electroplating for fabrication of through-silicon via, ., 0, 0, – (2016)
• Effect of surface functional groups on the pH sensitivity in ion-sensitive field effect transistors, ., 0, 0, – (2016)
• Effects of Work-function Variation on Analog Figures-of-merits of Inversion-mode and Junctionless Nanowire Transistors, ., 0, 0, – (2016)
• Highly Sensitive BioFETs with 3-Dimensional Nanonet Channel for Biosensing Applications, ., 0, 0, – (2016)
• Fabrication and Characterization of, ., 0, 0, – (2016)
• Investigation of 1/f Noise Characteristics in Junctionless Poly-Si Thin-Film Transistors under Hot Carrier Injection, ., 0, 0, – (2016)
• Investigation of oxide traps at SiC/SiO2 interfacial layer in SiC DMOSFET for high-power applications, ., 0, 0, – (2016)
• High performances BioFETs with 3-dimensional nanostructures for biosensing applications, ., 0, 0, – (2016)
• Transfer Characteristics of Vacuum Channel FETs with Tip Positions of Emitter and Collector, ., 0, 0, – (2016)
• Fabrication and Bias-Temperature Instability of Vertical Low-Temperature Poly-Si Thin-Film Transistor, ., 0, 0, – (2016)
• Investigation of stress-induced instability of SiC DMOSFETs, ., 0, 0, – (2016)
• Reliability Characteristics in Junctionless Poly-Si Thin-Film Transistors, ., 0, 0, – (2016)
• A Threshold Voltage Variation Calibration Algorithm for An ISFET-Based Low-Cost pH Sensor System, ., 0, 0, – (2015)
• Effects of Buffer Concentration on Sensing Performances of Ion-Sensitive Field-Effect Transistors with Si-Nanowires, ., 0, 0, – (2015)
• Electrical Variation of Vertical Macaroni NAND Cells due to Random Grain Boundary Using Voronoi Method, ., 0, 0, – (2015)
• The Electrical Variations due to Grain Boundary using Voronoi Method in Tunneling Field-Effect-Transistor (TFET) of Polysilicon Nanowire Channel, ., 0, 0, – (2015)
• Various Heterojunction Single Gate Tunneling FETs with Graded Channel Doping in Sub- 40 nm Channels, ., 0, 0, – (2015)
• The Statistical Distribution of Electrical Characteristics with Random Grain Boundary in Vertical NAND Unit Cells, ., 0, 0, – (2015)
• Electrical Characteristics of Graphene Field Effect Transistors on Stainless Steel (STS) Substrate, ., 0, 0, – (2015)
• The Temperature Dependence of Threshold Voltage Variations due to Oblique Single Grain Boundary in 3D NAN D Unit Cells, ., 0, 0, – (2014)
• Electrical and pH Sensing Characteristics of Si Nanowire-Based Suspended FET Biosensors, ., 0, 0, – (2014)
• Noise Consideration for Cancer Marker Detection using Nanowire Sensors, ., 0, 0, – (2014)
• Novel biosensor platform based on Si-nanowire-Network Structures, IEEE INEC2014, 0, 0, – (2014)
• The Variability due to Random Discrete Dopant and Grain Boundary in 3D NAND Unit Cell, IEEE INEC2014, 0, 0, – (2014)
• Analysis of atomic migration in In2Se3 nanowire for phase change memory applications, ., 0, 0, – (2014)
• Improved phase transition performance of Ga-doped indium oxide nanowire phase change random access memory with encapsulating layer, ., 0, 0, – (2014)
• Blue Nano-Flower Photonic Quantum Ring Laser, ., 0, 0, – (2014)
• Effects of Grain Boundary Traps on Electrical Variation in 3D Vertical NAND Flash Memory Cell with Macaroni Channel Structure, ., 0, 0, – (2014)
• An experimental verification of a scaled RC-dominant interconnect line model for High-speed wireline, ., 0, 0, – (2014)
• 3D Simulation of Threshold Voltage Variations Due to Random Grain Boundary and Discrete Dopants in Sub-20 nm Gate-All-Around Poly-Si Transistors, ., 0, 0, – (2014)
• Analysis of pseudo reference electrode in silicon nanowire ISFETs for hydrogen ion detection, ., 0, 0, – (2013)
• Silicon Nanowire Bio-Field Effect Transistor with Embedded Ag/AgCl Pseudo Reference Electrode, ., 0, 0, – (2013)
• Diameter-related Characteristics of In2Se3 Nanowire Based Phase Change Memory, ., 0, 0, – (2013)
• Graphene Field Effect Transistor with High-k Gate Dielectric on Flexible Stainless Steel (STS) Substrate, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, – (2013)
• Silicidation for Forming Low Contact Resistance of Ohmic Contact on 4H-SiC using Ni and Ti/Ni Layer, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, – (2013)
• Fabrication and Characterization of Blue Nano Photonic Quantum Ring Laser, ., 0, 0, – (2013)
• Simulation Study of Random Discrete Dopants and Grain Boundary in Polysilicon Channel FETs, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, – (2013)
• Growth of SiGe Epitaxial Layer Using UHV-CVD for Multi-Stacked Suspended Nanostructures, 5TH INTERNATIONAL SYMPOSIUM ON IT CONVERGENCE ENGINEERING, 0, 0, – (2013)
• Ti/Ni 이중막을 이용한 p형 및 n형 SiC ohmic contact의 동시 형성, ., 0, 0, – (2013)
• Improved performance of In2Se3 nanowire device with thermal boundary resistance (TBR) for phase change memory application, ., 0, 0, – (2013)
• Nanowire Ion-Sensitive Field Effect Transistor for Uric acid Detection, ., 0, 0, – (2013)
• UHV-CVD를 이용한 SiGe 에피 성장 및 Multi-Stacked 구조의 Suspended 나노선 응용, ., 0, 0, – (2013)
• Modeling and Analysis of the Parasitic Series Resistance in Raised Source/Drain FinFETs with Polygonal Epitaxy, ., 0, 0, – (2012)
• Investigation on hot carrier effects in n-type short-channel junctionless nanowire transistors, 12TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, 0, 0, – (2012)
• Enhancement of electrical properties of ZnTe nanowires, ., 0, 0, – (2012)
• Band gap modulation in VLS-grown CdxZn1-xTe alloy nanowires, ., 0, 0, – (2012)
• Effective Parameters on Growth Conditions of CdTe Nanowires Synthesized by Vapor-liquid-Solid Method, ., 0, 0, – (2012)
• Uric acid detection using Si-nanowire Ion-Sensitive Field Effect Transistors, ., 0, 0, – (2012)
• Intrinsic Reliability Improvement of SiGe Quantum Well pMOSFETs, INTERNATIONAL CONFERENCE ON SUPERLATTICES, NANOSTRUCTURES, AND NANODEVICES, 0, 0, – (2012)
• Determination of Operation Region in Silicon-Nanowire BioFETs to Maximize Signal-to-Noise Ratio, INTERNATIONAL CONFERENCE ON SUPERLATTICES, NANOSTRUCTURES, AND NANODEVICES, 0, 0, – (2012)
• Dielectric Degradation and Breakdown of High-k/Metal Gate Stack nMOSFETs, ., 0, 0, – (2012)
• Si nanowire ion-sensitive field efect transistor(ISFET) for biosensor application, ., 0, 0, – (2012)
• Comparative Study of Geometry-dependent Capacitances of Planar FETs and Double-Gate FinFETs: Optimization and Process Variation, ., 0, 0, – (2012)
• Sensing and Noise Characteristics of Si-Nanowire Ion-Sensitive-Field-Effect-Transistors for Future Biosensor Applications, ., 0, 0, – (2012)
• 비종단구조 Si-VDMOSFET 소자의 전기적 특성, ., 0, 0, – (2011)
• Nanoscale Silicon Ion-Sensiive Field-Effect Transistor for pH Sensor and Biosensor Applications, ., 0, 0, – (2011)
• Highly Sensitive BioFETs with Various Nanowire Structure, ., 0, 0, – (2011)
• Development of biologically active Si nanowire field effect transistors (biofets) for detecting carcinoembryonic antigens(CEA), ., 0, 0, – (2011)
• ZnTe Nanowires fabrication and characterizatin of theri thermoelectric properties, ., 0, 0, – (2011)
• synthesis and electrical characteristics of In2Se3 nanowires for phase change memory applications, ., 0, 0, – (2011)
• Positioning Nanostructures via DNA Origami Templates on a MEMS Device for Thermoelectric Characterization, ., 0, 0, – (2011)

• Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
• Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
• Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
• Nanowire Field Effect Transistors: Principles and Applications, Springer, , (2013)
• Characterization of Gate-All-around Si-Nanowire Field-Effect Transistor: extraction of series resistance and capacitance-voltage behavior, CRC PRESS, , (2013)
• Plasma Processing of Nanomaterials, CRC Press, , (2011)
• Trends in nano- and micro-cavities, Bentham Science Publishers Ltd., , (2010)
• 놀라운 세계 카본나노튜브, ITCE/NCNT, , 이정수 (2009)

• 3D APT(ATOM-PROBE TOMOGRAPHY)를 이용한 HIGH-K 절연막 특성분석, 포항공과대학교 (2008-2009)
• 3D APT(ATOM-PROBE TOMOGRAPHY)를 이용한 HIGH-K 절연막 특성분석, 포항공과대학교 (2009-2010)
• (학생)인건비풀링과제, 포항공대산학협력단 (2009-2020)
• 3D APT를 연계한 나노 반도체소자의 전기적 구조적 특성분석, 삼성전자(주) (2010-2011)
• LED 조명용 고효율 파워 소자 개발, 포항공대산학협력단 (2010-2011)
• 인건비풀링과제, 포항공과대학교 (2011-2015)
• 자체연구개발과제, 포항공과대학교 (2006-2016)
• VERTICAL 구조의 FLASH MEMORY 특성 분석 및 모델링, 삼성전자(주) (2011-2012)
• 고효율 인버터시스템을 위한 저손실 SIC 스위칭소자 개발, 한국전기연구원 (2011-2012)
• VERTICAL 구조의 FLASH MEMORY 특성 분석 및 모델링, 삼성전자(주) (2012-2013)
• 고효율 인버터시스템을 위한 저손실 SIC 스위칭소자 개발, 한국전기연구원 (2012-2013)
• VERTICAL LOW TEMPERATURE POLY-SI TFT 개발, 삼성디스플레이(주) (2014-2015)
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• 자체연구개발과제[2015년 신설], 포항공과대학교 (2015-2034)
• VERTICAL 3D NAND FLASH의 RELIABILITY 특성 연구, 에스케이하이닉스 주식회사 (2015-2017)

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• 이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, 중국, 201280018389.1 (2013)
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• 이정수,김성호,임태욱,김기현,정윤하,백창기, 네트워크 구조의 나노선을 구비한 나노선 센서 및 그 제조방법, USA, 14/111,727 (2013)
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• 이정수,임태욱,백창기,김성호,김기현,정윤하, 3차원 적층 구조의 나노선을 구비한 나노선 전계효과 센서, 한국, 10-2012-0140109 (2012)
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