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Professor Profile

Seyoung Kim

Professor
Position

Professor

Lab

AI & Neuromorphic Device Lab · LG Room 219

Education

3
2008-2012

UNIV. OF TEXAS AT AUSTIN (박사-Semiconductor Device)

2006-2008

UNIV. OF TEXAS AT AUSTIN (석사-Semiconductor Device)

1999.03 ~ 2006.08

서울대학교 (학사-전기정보공학)

Career

2
2015 - 2019

Research Staff Member IBM T. J. Watson Research Center

2012 - 2015

Post-doctorate Researcher IBM T. J. Watson Research Center

Journals

58
A Novel Indium Gallium Zinc Oxide ChannelBased Electrochemical Field Effect Transistor for Physical Reservoir Computing, Advanced Intelligent Systems, , 8, - (2026 )
NonPerturbative Oxygen Vacancy Mapping via IndependentlyContacted ReciprocallySwitching DoubleLayer ECRAM for InMemory Computing, Small, , 22, - (2026 )
Highlyefficient and scalable TrioN (3N0C) synaptic cell for analog processinmemory (vol 12 pg 7509 2025), Materials Horizons, , 13, 2595-2595 (2026 )
A 1048 TOPSW ECRAMBased Analog ComputeinMemory System With Adaptive Error Sensing and VariableBit ADC Schemes for Efficient OnChip Training and Inference, IEEE Transactions on Circuits and Systems I Regular Papers, , , - (2026 )
A Multibit ECRAMBased Analog Neuromorphic System with HighPrecision Current Readout Achieving 973 Inference Accuracy, IEEE Transactions on Biomedical Circuits and Systems, , 19, 590-604 (2025 )
Design Strategies of CapacitorBased Synaptic Cell for HighEfficiency Analog Neural Network Training, Advanced Intelligent Systems, , 7, - (2025 )
Verification of neuromorphic processing accuracy against nonideal errors in synapsebased neural network systems, International Journal of Circuit Theory and Applications, , 53, 453-465 (2025 )
Device Specifications for Neural Network Training with Analog Resistive Cross‐Point Arrays Using Tiki‐Taka Algorithms, Advanced Intelligent Systems, , 7, - (2025 )
ChannelBoosted Electrochemical RAM With aIGZO TFT for Highly Accurate and EnergyEfficient Neural Network Computation, IEEE Transactions on Electron Devices, , 72, 3516-3520 (2025 )
Analog Switching in Hexagonal Boron Nitride Memristors via Multiple NanoFilaments Confinement, Small, , 21, - (2025 )
Unconventional Multimodal Switching in SingleCrystalline Nanowire Channel ECRAM, Small, , 21, - (2025 )
Unveiling ECRAM switching mechanisms using variable temperature Hall measurements for accelerated AI computation, Nature Communications, , 16, - (2025 )
Investigating contact resistance between WOx and metal electrodes in ECRAMs via interface analysis, Scientific Reports, , 15, - (2025 )
Highlyefficient and scalable TrioN (3N0C) synaptic cell for analog processinmemory, Materials Horizons, , 12, 7509-7519 (2025 )
Retentionaware zeroshifting technique for TikiTaka algorithmbased analog deep learning accelerator, Science Advances, , 10, - (2024 )
Attojoule Hexagonal Boron NitrideBased Memristor for HighPerformance Neuromorphic Computing, Small, , 20, - (2024 )
A Multibit ECRAMBased Analog Neuromorphic System with HighPrecision Current Readout Achieving 973 Inference Accuracy, IEEE Transactions on Biomedical Circuits and Systems, , , - (2024 )
Design Strategies of CapacitorBased Synaptic Cell for HighEfficiency Analog Neural Network Training, Advanced Intelligent Systems, , , - (2024 )
Electrochemical randomaccess memory recent advances in materials devices and systems towards neuromorphic computing, Nano Convergence, , 11, - (2024 )
Device Specifications for Neural Network Training with Analog Resistive Cross‐Point Arrays Using Tiki‐Taka Algorithms, Advanced Intelligent Systems, , , - (2024 )
Atomically Thin Synapse Networks on Van Der Waals PhotoMemtransistors, Advanced Materials, , , - (2023 )
Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with SelfAssembled Monolayer for HighPrecision Neural Network Computation, Advanced Electronic Materials, , 9, - (2023 )
Recent Advances and Future Prospects for Memristive Materials Devices and Systems, ACS Nano, , , - (2023 )
WOx channel engineering of Cuiondriven synaptic transistor array for lowpower neuromorphic computing, Scientific Reports, , 13, - (2023 )
Accurate Weight Update in an Electrochemical RandomAccess Memory Based CrossPoint Array Using ChannelHigh HalfBias Scheme for Deep Learning Accelerator, Advanced Electronic Materials, , 9, - (2023 )
Impact of Asymmetric Weight Update on Neural Network Training With TikiTaka Algorithm, Frontiers in Neuroscience, , 15, - (2022 )
Neural Network Training With Asymmetric Crosspoint Elements, Frontiers in Artificial Intelligence, , 5, - (2022 )
Vertical MetalOxide Electrochemical Memory for HighDensity Synaptic Array Based HighPerformance Neuromorphic Computing, ADVANCED ELECTRONIC MATERIALS, , 8, - (2022 )
Exploiting Read Current Noise of TiOx Resistive Memory by Controlling Forming Conditions for Probabilistic Neural Network Hardware, IEEE ELECTRON DEVICE LETTERS, , 43, 1571-1574 (2022 )
Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device, IEEE Journal of the Electron Devices Society, , 10, 666-669 (2022 )
IntegrateandFire Neuron With LiBased Electrochemical Random Access Memory Using Native Linear Current Integration Characteristics, IEEE Transactions on Electron Devices, , 69, 4889-4893 (2022 )
Analysis of electrochemical RAM synaptic array for energyefficient weight update, Frontiers in Nanotechnology, , 4, - (2022 )
Impact of Operating Temperature on Pattern Recognition Accuracy of Resistive ArrayBased Hardware Neural Networks, IEEE ELECTRON DEVICE LETTERS, , 42, 763-766 (2021 )
Neural Network Training Acceleration With RRAMBased Hybrid Synapses, FRONTIERS IN NEUROSCIENCE, , 15, - (2021 )
Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training, IEEE Electron Device Letters, , 42, 609-612 (2021 )
Experimental measurement of ungated channel region conductance in a multiterminal metal oxidebased ECRAM, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, , 36, - (2021 )
Elucidating Ionic Programming Dynamics of MetalOxide Electrochemical Memory for Neuromorphic Computing, Advanced Electronic Materials, , 7, - (2021 )
Improvement of Synaptic Properties in OxygenBased Synaptic Transistors Due to the Accelerated Ion Migration in SubStoichiometric Channels, Advanced Electronic Materials, , 7, - (2021 )
Impact of electrolyte density on synaptic characteristics of oxygenbased ionic synaptic transistor, Applied Physics Letters, , 119, - (2021 )
Alloying conducting channels for reliable neuromorphic computing, NATURE NANOTECHNOLOGY, , 15, 574- (2020 )
Improved Pattern Recognition Accuracy of Hardware Neural Network Deactivating Short Failed Synapse Device by Adopting Ovonic Threshold Switching (OTS)Based Fuse Device, IEEE ELECTRON DEVICE LETTERS, , 41, 1436-1439 (2020 )
Pr07Ca03MnO3Based ThreeTerminal Synapse for Neuromorphic Computing, IEEE ELECTRON DEVICE LETTERS, , 41, 1500-1503 (2020 )
Hardware and Software Cooptimization for the Initialization Failure of the ReRAMbased Crossbar Array, ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS, , 16, - (2020 )
Signal and noise extraction from analog memory elements for neuromorphic computing, Nature Communications, , 9, - (2018 )
Unveiling the carrier transport mechanism in epitaxial graphene for forming waferscale singledomain graphene, Proceedings of the National Academy of Sciences of the United States of America, , 114, 4082-4086 (2017 )
Neuromorphic computing using nonvolatile memory, Advances in Physicsx, , 2, 89-124 (2017 )
Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition, PHYSICAL REVIEW B, , 85, 201408-201413 (2012 )
Coulomb drag and magnetotransport in graphene double layers, Solid State Communications, , 152, 1283-1288 (2012 )
Scaling of Al2O3 dielectric for graphene fieldeffect transistors, Applied Physics Letters, , 100, 93112- (2012 )
Direct Measurement of the Fermi Energy in Graphene Using a DoubleLayer Heterostructure, PHYSICAL REVIEW LETTERS, , 108, 116404-116409 (2012 )
Magnetotransport Properties of QuasiFreeStanding Epitaxial Graphene Bilayer on SiC Evidence for Bernal Stacking, Nano Letters, , 11, 3624-3628 (2011 )
Spin to Valley Polarized Transition in Graphene Bilayers at ν 0 in High Magnetic Fields, Physical Review Letters, , 107, 16803- (2011 )
Coulomb drag of massless fermions in graphene, Physical Review B Condensed Matter and Materials Physics, , 83, 161401- (2011 )
LowFrequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene, Nano Letters, , 11, 85-90 (2010 )
Graphene for CMOS and Beyond CMOS Applications, Proceedings of the IEEE, , 98, 2032-2046 (2010 )
LargeArea Synthesis of HighQuality and Uniform Graphene Films on Copper Foils, Science, , 324, 1312-1314 (2009 )
Realization of a high mobility dualgated graphene fieldeffect transistor with Al2O3 dielectric, Applied Physics Letters, , 94, - (2009 )
Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric, Applied Physics Letters, , , - (0020 )

Conference Papers

10
An ECRAMBased Analog ComputeinMemory Neuromorphic System with HighPrecision Current Readout, BioCAS 2023 2023 IEEE Biomedical Circuits and Systems Conference Conference Proceedings, , 0, - (2023)
Metaloxide based CMOScompatible ECRAM for Deep Learning Accelerator, IEEE International Electron Devices Meeting (IEDM) 2019, , 0, 35.7.1-35.7.4 (2019)
Reliability Challenges with Materials for Analog Computing, 2019 IEEE International Reliability Physics Symposium (IRPS), , 0, - (2019)
ECRAM as Scalable Synaptic Cell for HighSpeed LowPower Neuromorphic Computing, IEEE International Electron Devices Meeting (IEDM) 2018, , 0, 13.1.1-13.1.4 (2018)
Capacitorbased Crosspoint Array for Analog Neural Network with Record Symmetry and Linearity, 2018 IEEE Symposium on VLSI Technology, , 0, - (2018)
Analog CMOSbased Resistive Processing Unit for Deep Neural Network Training, 2017 IEEE 60th International Midwest Symposium on Circuits and Systems, , 0, - (2017)
CMOS compatible MIM decoupling capacitor with reliable subnm EOT highk stacks for the 7 nm node and beyond, 2016 IEEE International Electron Devices Meeting, 0, 0, - (2016)
CMOS compatible MIM decoupling capacitor with reliable subnm EOT highk stacks for the 7 nm node and beyond, 2016 IEEE International Electron Devices Meeting, , 0, - (2016)
Temperaturedependent studies of the electrical properties and the conduction mechanism of HfOxbased RRAM, Proceedings of Technical Program 2014 International Symposium on VLSI Technology Systems and Application (VLSITSA), , 0, - (2014)
Thickness dependence of carrier mobility in mono and bilayer graphene with HfO2 gate dielectric, 68th Device Research Conference, , 0, - (2010)

IP

48
김세영,김승건,변진호, 공유 채널 기반의 인공지능 뉴로모픽 소자, USA, 19/415,555 (P202)
김세영,우지용,곽현정,최준영, 적층형 시냅스 어레이 및 그 제조 방법, USA, 19/006,707 (P202)
김세영,이병우, 소자 기반 크로스 포인트 어레이 및 투 사이클을 통한 크로스 포인트 어레이의 업데이트 방법, USA, 18/758,245 (P202)
김세영,이병우, 뉴로모픽 반도체 소자 및 동작 방법, EP, 24209656.8 (P202)
김세영,이병우, 뉴로모픽 반도체 소자 및 동작 방법, USA, 18/945,134 (P202)
김세영,김승건,손정훈,이병우, 인공신경망 학습을 위한 3단자 시냅스 소자, 이를 이용한 시냅스 어레이 및 그 동작방법, 대만, 113127983 (P202)
김세영,김승건,손정훈,이병우, 인공신경망 학습을 위한 3단자 시냅스 소자, 이를 이용한 시냅스 어레이 및 그 동작방법, EP, 24191580.0 (P202)
김세영,김승건,손정훈,이병우, 인공신경망 학습을 위한 3단자 시냅스 소자, 이를 이용한 시냅스 어레이 및 그 동작방법, USA, 18/885,111 (P202)
김세영,손정훈,김승건, 더블 게이트 형 뉴로모픽 메모리 소자 및 그 제조 방법, USA, 18/817,862 (P202)
김세영,손정훈,김승건, 더블 게이트형 뉴로모픽 메모리 소자 및 그 제조 방법, EP, 24191484.5 (P202)
김세영,손정훈,김승건, 더블 게이트형 뉴로모픽 메모리 소자 및 그 제조 방법, 대만, 113127981 (P202)
김세영,김도윤, 디지털-아날로그 메모리 통합형 딥러닝 가속기 시스템 및 이를 이용한 인공신경망 학습 방법, USA, 18/652,689 (P202)
김세영,주봉준, 하이브리드 크로스포인트 메모리 장치 및 그 연산 방법, 한국, 10-2026-0045725 (IP26)
김세영,주봉준,변진호, 게인 셀 메모리 및 그 연산 방법, 한국, 10-2026-0041920 (IP25)
김세영,최준영,이병우,주봉준,허가은, 메모리 동작 방법, 인메모리 컴퓨팅 셀 및 그 제조 방법, 한국, 10-2026-0020998 (IP25)
김세영,최준영,이병우, 메모리 셀 및 그 동작 방법, 한국, 10-2025-0209797 (IP25)
김세영,변진호, 아날로그 인공지능 학습용 뉴로모픽 연산 장치 및 방법, 한국, 10-2026-0038136 (IP25)
김세영,이병우,최준영, 시냅틱 소자 및 그 동작 방법, 한국, 10-2025-0137183 (IP25)
김세영,변진호, 아날로그 인 메모리 신경망 연산 장치 및 방법, 그리고 이를 포함하는 뉴로모픽 시스템, 한국, 10-2025-0119522 (IP25)
김세영,이병우,최준영, 시냅틱 소자 및 그 동작 방법, 한국, 10-2025-0137182 (IP25)
김세영,김혜진,변진호, 산화물 반도체 채널을 활용한 이온 거동 기반의 전기화학적 낸드 플래쉬 메모리 장치 및 그 제조 방법, 이를 통한 뉴로모픽 연산용 메모리 소자, 한국, 10-2025-0058402 (IP25)
김세영,김혜진,변진호, 반도체 소자, 한국, 10-2025-0058498 (IP24)
김세영,김승건,변진호, 메모리 리텐션(retention) 특성을 보완할 수 있는 뉴로모픽 연산 장치 및 연산 방법, 한국, 10-2025-0031011 (IP24)
김세영,김승건,변진호, 하이브리드 인공지능 가속장치 및 가속방법, 한국, 10-2025-0031012 (IP24)
김세영,김승건,변진호, 공유 채널 기반의 인공지능 뉴로모픽 소자, 한국, 10-2024-0185097 (IP24)
김세영,최준영,곽현정, 수직구조의 홀 센서 및 그 제조 방법, 한국, 10-2024-0085701 (IP24)
김세영,김승건,이준용,이병우,손정훈,김혜진, 수직형 시냅스 소자 및 그 제조 방법, 한국, 10-2024-0056216 (IP24)
김세영,우지용,곽현정,최준영, 적층형 시냅스 어레이 및 그 제조 방법, 한국, 10-2024-0028949 (IP23)
김세영,곽현정, 전기화학적 메모리 기반의 저역통과필터 소자, Korea, 10-2023-0193000 (2023)
김세영,이병우, 소자 기반 크로스 포인트 어레이 및 투 사이클을 통한 크로스 포인트 어레이의 업데이트 방법, Korea, 10-2023-0145820 (2023)
김세영,노경미, 비휘발성 메모리 소자 딥러닝 학습 전처리 방법, Korea, 10-2023-0122579 (2023)
김세영,김도윤, 시냅스 어레이 소자 및 이를 이용한 인공 신경망 학습 방법, USA, 18/381,273 (2023)
김세영,이병우, 뉴로모픽 반도체 소자 및 동작 방법, Korea, 10-2023-0158331 (2023)
김세영,김승건,손정훈,이병우, 인공신경망 학습을 위한 3단자 시냅스 소자, 이를 이용한 시냅스 어레이 및 그 동작방법, Korea, 10-2023-0126835 (2023)
김세영,손정훈,김승건, 더블 게이트 형 뉴로모픽 메모리 소자 및 그 제조 방법, Korea, 10-2023-0116491 (2023)
김세영,김도윤, 디지털-아날로그 메모리 통합형 딥러닝 가속기 시스템 및 이를 이용한 인공신경망 학습 방법, Korea, 10-2023-0113702 (2023)
정윤영,박성민,전길수,성수원,김세영, 시냅스 소자 및 그 구동 방법, Korea, 10-2022-0177321 (2022)
정윤영,박성민,성수원,김세영,전길수, 시냅스 소자 및 그 구동 방법, Korea, 10-2022-0177307 (2022)
김세영,김도윤,변진호, 시냅스 어레이 소자 및 이를 이용한 인공 신경망 학습 방법, Korea, 10-2022-0187082 (2022)
김세영,손정훈,곽현정,김도윤,이철준, 3차원 수직형 메모리 소자 및 그 제조 방법, USA, 17/871,855 (2022)
김세영,이채운,노경미,지원재, 뉴로모픽 반도체 소자 및 동작 방법, USA, 17/837,006 (2022)
김세영,노경미,지원재,이채운, 뉴로모픽 반도체 소자 및 동작 방법, Korea, 10-2021-0183551 (2021)
김세영,지원재,정윤영, 뉴로모픽 반도체 소자 및 동작 방법, Korea, 10-2022-0030083 (2021)
김세영,곽현정,이철준,김도윤,손정훈, 3차원 수직형 메모리 소자 및 그 제조 방법, Korea, 10-2021-0103372 (2021)
김세영,곽현정,이철준,이민경,황현상, 3단자 시냅스 소자 및 이를 이용한 최대 컨덕턴스 제한 방법, Korea, 10-2021-0012982 (2020)
김세영,이철준,황현상, 3단자 시냅스 소자를 이용한 뉴로모픽 시스템, Korea, 10-2021-0019959 (2020)
이철준,김세영,황현상, 3단자 시냅스 소자를 이용한 뉴로모픽 시스템, Korea, 10-2021-0019959 (2020)
황현상,최우석,김세영, 저항 변화 메모리 어레이 기반의 가중 시냅스를 이용한 뉴럴 네트워크, Korea, 10-2020-0074862 (2020)